Esd in Silicon Integrated Circuits Tapa dura - 2002

Descripción de contraportada

As high density circuits move deeper into submicron dimensions Electrostatic Discharge (ESD) effects become an increasing concern. This new edition of a classic reference presents a practical and systematic approach to ESD device physics, modelling and design techniques. The authors draw upon their wealth of industrial experience to provide a complete overview of ESD and its implications in the development of advanced integrated circuits. Fully revised to incorporate the latest industry achievements and featuring:
* Design methods for a variety of technologies from 1 micron to the current sub-micron regimes, along with complete design approaches for MOS, BiCMOS and Power MOSFETs. * New sections on ESD design rules, process technology effects, layout approaches, package effects and circuit simulations. * Guidance on the implementation of circuit protection measures for a range of I/O configurations. * Detailed coverage of ESD simulation stress models.
This unique reference provides the means to design protection circuits for a variety of applications and to diagnose and solve ESD problems in IC products. The coverage of state-of-the-art circuit design for ESD prevention will appeal to engineers and scientists working in the fields of IC and transistor design. Graduate students and researchers in device/circuit modeling and semiconductor reliability will appreciate this comprehensive coverage of ESD fundamentals.