Physics of Semiconductor Devices Tapa dura - 2021
de Simon M. Sze; Yiming Li; Kwok K. Ng
Descripción de contraportada
The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices
The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters.
Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). The text then focuses on negative-resistance and power devices, and concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. The standard textbook and reference in the field of semiconductor devices, this classic volume:
- Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices
- Offers completely updated and revised information that reflects advances in device concepts, performance, and applications
- Features new discussion of topics of increased contemporary interest such as the negative capacitance and tunneling field-effect transistors, 3-dimensional flash memories, GaN modulation-doped FETs, intermediate-band solar cells, and emitter turn-off thyristors
- Includes numerous problem sets, real-world examples, tables, figures, and illustrations, several useful appendices, and a detailed solutions manual
- Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors
Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for device engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.
Detalles
- Título Physics of Semiconductor Devices
- Autor Simon M. Sze; Yiming Li; Kwok K. Ng
- Encuadernación Tapa dura
- Páginas 944
- Volúmenes 1
- Idioma ENG
- Editorial Wiley
- Fecha de publicación 2021-03-03
- Features Bibliography, Index
- ISBN 9781119429111 / 1119429110
- Peso 2.65 libras (1.20 kg)
- Dimensiones 9.1 x 6.3 x 1.6 pulgadas (23.11 x 16.00 x 4.06 cm)
- Library of Congress subjects Semiconductors
- Número de catálogo de la Librería del Congreso de EEUU 2020028806
- Dewey Decimal Code 537.622
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